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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3565 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) *Good Linearity of hFE *Low Saturation Voltage APPLICATIONS *Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w scs .i w VALUE UNIT 300 V 300 V 7 V 0.2 A 15 W .cn mi e VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -40~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3565 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10A ; IE= 0 IC= 1mA ; RBE= 300 V V(BR)CEO Collector-Emitter Breakdown Voltage 300 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10A ; IC= 0 7 V VCE(sat) ICEO Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA VCE= 250V; RBE= 1.5 V A Collector Cutoff Current 1 hFE DC Current Gain IC= 10mA; VCE= 10V fT Current-Gain--Bandwidth Product w w scs .i w IC= 10mA; VCE= 20V .cn mi e 30 200 80 MHz isc Websitewww.iscsemi.cn 2 |
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